Correlated excited states in the narrow band gap semiconductor FeSi and antiferromagnetic screening of local spin moments
نویسندگان
چکیده
منابع مشابه
Semiconductor waveguide inversion in disordered narrow band-gap materials
It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III–V materials. However, to this point, investigations have assumed the materials to be perfect. In this article, we present results of a semiconductor waveguide inverter in GaAs and InAs with disordered material effects included in the simulation. The behavior of the ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.98.125205